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Epitaxial growth of ferromagnetic semiconductor Ga_1―xMn_xAs film on Ge(001) substrateSPIESSER, Aurélie; SATO, Yuki; SAITO, Hidekazu et al.Thin solid films. 2013, Vol 536, pp 323-326, issn 0040-6090, 4 p.Article

Mn-impurity-conduction-mediated ferromagnetic ordering in Ga_1-xMn_xAs (x = 0.034 and x = 0.050)NAGAI, Yasuyuki; NAGASAKA, Keigo.Infrared physics & technology. 2006, Vol 48, Num 1, pp 1-15, issn 1350-4495, 15 p.Article

Kondo coupling and Curie temperature of Ga_1-xMn_xAs in the coherent potential approximationFENG, Sze-Shiang; MOCHENA, Mogus.Physica. B, Condensed matter. 2007, Vol 390, Num 1-2, pp 79-83, issn 0921-4526, 5 p.Article

Effect of low-temperature annealing on transport properties of Ga_1-xMn_xAsMALFAIT, M; VANACKEN, J; VAN ROY, W et al.Journal of magnetism and magnetic materials. 2004, Vol 272-76, pp 1997-1998, issn 0304-8853, 2 p., 3Conference Paper

Are values of parameters describing magnetic properties of crystal really fixed?SZUSZKIEWICZ, W; DYNOWSKA, E.Journal of alloys and compounds. 2005, Vol 401, Num 1-2, pp 272-280, issn 0925-8388, 9 p.Conference Paper

Mean-field approach to disorder effects on ferromagnetism in Ga_1-xMn_xAsBERCIU, Mona; BHATT, R. N.Physica. B, Condensed matter. 2002, Vol 312-13, pp 815-817, issn 0921-4526Conference Paper

A resonant tunneling diode based on a Ga_1-xMn_xAs/GaAs double barrier structureMAKLER, S. S; BOSELLI, M. A; WEBERSZPIL, J et al.Physica. B, Condensed matter. 2002, Vol 320, Num 1-4, pp 396-399, issn 0921-4526Conference Paper

First-principles calculations of electronic structures of diluted magnetic semiconductors (Ga, Mn)AsOGAWA, T; SHIRAI, M; SUZUKI, N et al.Journal of magnetism and magnetic materials. 1999, Vol 196-97, pp 428-429, issn 0304-8853Conference Paper

Ga sublattice defects in (Ga, Mn)As: Thermodynamical and kinetic trendsTUOMISTO, F; PENNANEN, K; SAARINEN, K et al.Physical review letters. 2004, Vol 93, Num 5, pp 055505.1-055505.4, issn 0031-9007Article

Material aspects of spin injection in semiconductorsBORGHS, G; DEBOECK, J.Materials science & engineering. B, Solid-state materials for advanced technology. 2001, Vol 84, Num 1-2, pp 75-80, issn 0921-5107Conference Paper

Non-monotonic dependence of the anomalous Hall coefficient scaling parameter in annealed Ga_1-xMn_xAs epifilmsCHOI, H. K; LEE, W. O; OH, Y. S et al.Journal of magnetism and magnetic materials. 2007, Vol 310, Num 2, pp 2129-2131, issn 0304-8853, 3 p., 3Conference Paper

Growth and annealing effect of ferromagnetic (Ga, Mn)As on Si(1 0 0) substratesUCHITOMI, Nantaka; SATO, Sin'Ya; JINBO, Yoshio et al.Applied surface science. 2003, Vol 216, Num 1-4, pp 607-613, issn 0169-4332, 7 p.Conference Paper

Optical characterisation of MOVPE-grown Ga_1-xMn_xAs semimagnetic semiconductor layersHARTMANN, T; LAMPALZER, M; STOLZ, W et al.Thin solid films. 2000, Vol 364, Num 1-2, pp 209-212, issn 0040-6090Conference Paper

Epitaxy of (Ga, Mn)As, a new diluted magnetic semiconductor based on GaAsSHEN, A; OHNO, H; MATSUKURA, F et al.Journal of crystal growth. 1997, Vol 175-76, pp 1069-1074, issn 0022-0248, 2Conference Paper

Competition between cubic and uniaxial anisotropy in Ga_1-xMn_xAs in the low-Mn-concentration limitTITOVA, L. V; KUTROWSKI, M; LIU, X et al.Physical review B. Condensed matter and materials physics. 2005, Vol 72, Num 16, pp 165205.1-165205.7, issn 1098-0121Article

Effect of electron-beam irradiation on the magnetic properties of Ga_1-xMn_xAs thin films grown on GaAs (100) substratesLEE, K. H; KIM, H. J; PARK, H. L et al.Solid state communications. 2005, Vol 135, Num 7, pp 420-423, issn 0038-1098, 4 p.Article

How to make semiconductors ferromagnetic: a first course on spintronicsSARMA, S. Das; HWANG, E. H; KAMINSKI, A et al.Solid state communications. 2003, Vol 127, Num 2, pp 99-107, issn 0038-1098, 9 p.Article

Hole concentration in a diluted ferromagnetic semiconductorDOS SANTOS, Raimundo R; OLIVEIRA, Luiz E; CASTRO, J. D'Albuquerque E et al.Journal of physics. Condensed matter (Print). 2002, Vol 14, Num 14, pp 3751-3757, issn 0953-8984Article

Magnetotransport and magnetization properties of p-type Ga_1-xMn_xAs, a new III-V diluted magnetic semiconductorVAN ESCH, A; DE BOECK, J; VAN BOCKSTAL, L et al.Journal of physics. Condensed matter (Print). 1997, Vol 9, Num 24, pp L361-L367, issn 0953-8984Article

Hydrogen control of ferromagnetism in a dilute magnetic semiconductorGOENNENWEIN, Sebastian T. B; WASSNER, Thomas A; HUEBL, Hans et al.Physical review letters. 2004, Vol 92, Num 22, pp 227202.1-227202.4, issn 0031-9007Article

Spin wave resonances in GaMnAsSASAKI, Y; LIU, X; WOJTOWICZ, T et al.Journal of superconductivity. 2003, Vol 16, Num 1, pp 143-145, issn 0896-1107, 3 p.Conference Paper

(GaMn)As: GaAs-based III-V diluted magnetic semiconductors grown by molecular beam epitaxyHAYASHI, T; TANAKA, M; NISHINAGA, T et al.Journal of crystal growth. 1997, Vol 175-76, pp 1063-1068, issn 0022-0248, 2Conference Paper

Growth and properties of (Ga, Mn)As : A new III-V diluted magnetic semiconductorMATSUKURA, F; OIWA, A; SHEN, A et al.Applied surface science. 1997, Vol 113114, pp 178-182, issn 0169-4332Conference Paper

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